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SBR0120S3 SBR0120S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Characteristics Values
IF(AV) Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage) 0.10 20 0.35 -65 to 125
Units
A V V, typ o C
ELECTRICAL: * Low Forward Voltage Drop * Low Reverse Leakage * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability o * 125 C Operating Junction Temperature
MECHANICAL: * Molded Plastic SOD-323, SOD-523 packages
SBR0120S3
Cathode Mark A
SBR0120S5
A
B
B
SOD-323
Di A C D G B C D E F H G H Min 2.30 1.60 0.25 1.15 0.10 0.85 0.20 Max 2.70 1.80 C 0.40 C 1.45 D 0.18 1.05 0.10 0.40 E E F D Di A B
SOD-523
Min 1.60 0.80 0.70 Max 1.80 1.0 0.85
0.35 (typ) 0.30 (typ) 0.70 (typ)
All Dimensions in mm
All Dimensions in mm F E F
SOD-323
SOD-523
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SBR0120S3 SBR0120S5
Maximum Ratings and Electrical Characteristics (at 25oC unless otherwise specified)
SYMBOL DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave)-50% duty cycle Peak Forward Surge Current - 1/2 60hz Instantaneous Forward Voltage o IF = 100mA; TJ = 25 C IF = 100mA; TJ = 75 C Maximum Reverse Current at Rated VRM TJ = 25 C
o TJ = 75 C o o
UNITS 20 Volts
VRM VRWM VRRM IO IFSM Typ ----Typ -----
0.10 2 Max 0.41 0.38 Max 20 500 -65 to +125
Amps Amps
VF
Volts
IR * TJ
uA uA
O
Operating and Storage Junction Temperature
NOTE: Dice are available for customer applications. * Pulse width < 300 uS, Duty cycle < 2%
C
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SBR0120S3 SBR0120S5
1000
Tj=125C If, Instantaneous Forward Current (Amps)
1
Ir, Reverse Current (uA)
100
Tj=75C
10
Tj=25C
Tj=125C
0.1
1
Tj=75C
Tj=25C
0.1 0 5 10 15 20 25
0.01 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
Vr, Reverse Voltage (Volts)
Vf, Instantaneous Forward Voltage (Volts)
Figure 1: Typical Reverse Current
Figure 2: Typical Forward Voltage
0.1 If, Average Forward Current (Amps)
0.05
0 0 25 50 Tc, Case Temp (C) 75 100 125
Figure 3: Current Derating, Case
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA Ph: 650 508 8896 FAX: 650 508 8865 Homepage: www.apdsemi.com email: info@apdsemi.com
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